Abstract
Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices is unavoidable. Furthermore, radiation defects are formed in detector structures during operation at extreme conditions. In this work, study of evolution of the proton-induced luminescence spectra and short-circuit current has been simultaneously performed during 1.6 MeV proton irradiation. GaN and AlGaN (with various Al concentrations) epi-layers grown by metalorganic chemical vapour deposition technique and Schottky diode structures have been examined. Variations of spectral and electrical parameters could be applied for the remote dosimetry of large hadron fluences.
Highlights
The wide bandgap AlGaN with varied Al content is one of the most promising materials for fabrication of radiation hard [1,2], double-response particle detectors [3] in particle accelerator facilities.the formation of extended and point defects during growth and fabrication of AlGaN based devices is unavoidable
The radiation defects are formed in detector structures during operation at extreme fluence conditions which can modify optical and electrical characteristics
(with various Al content) epi-layers grown by metalorganic chemical vapour deposition technique have been examined
Summary
The wide bandgap AlGaN with varied Al content is one of the most promising materials for fabrication of radiation hard [1,2], double-response particle detectors [3] in particle accelerator facilities. The formation of extended and point defects during growth and fabrication of AlGaN based devices is unavoidable. This leads to the appearance of ultraviolet (UV) photo-luminescence peaks which are shifted to the short-wavelength range with increase of Al content within this ternary material [4]. The radiation defects are formed in detector structures during operation at extreme fluence conditions which can modify optical and electrical characteristics. Modifications of these characteristics can be applied for dosimetry of high energy radiations.
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