Abstract
In article number 2000434, Eugenio Zallo and co-workers report a methodology based on the Raman technique for the measurement of the layer number in ultrathin GeSbTe films obtained by molecular beam epitaxy. The experimental and theoretical evolution of the in-plane low-frequency vibrational modes of Ge2Sb2Te5 from bulk down to a single lamella is demonstrated. The energy shift is mainly related to the weak van der Waals interactions between the layers.
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