Evolution of implantation induced damage under further ion irradiation: Influence of damage type

Abstract

The evolution of damage in silicon formed by H, He, and Si ion implantations under further ion irradiation, where the ion energy is primarily deposited into electronic excitation, has been studied at 77 K and at room temperature. For damage introduced by He or Si ion implantation, which primarily consists of vacancy and interstitial type defects, a subsequent irradiation with 110 keV protons at room temperature results in a decrease in ion channeling direct backscattering yield, while no change is observed when the irradiation is carried out at 77 K. In contrast, H ion implantation damage, which mainly consists of H-stabilized defects, is observed to increase under the same following on 110 keV proton irradiation at both room temperature and 77 K. The differences in damage evolutions can be used to construct a coherent picture of how energy deposited into electronic processes affects defect dissociation, migration, and reconstruction and the final damage morphology.