Abstract

High-speed buried tunnel junction (BTJ) vertical-cavity surface-emitting lasers (VCSELs) covering the long-wavelength range from 1.3 µm to 1.6 µm have been developed in the last decade and achieved remarkable performance. The InP-based monolithic approach with a BTJ as a current aperture and an integrated gold heat sink, which originated at the Walter Schottky Institute, is reviewed in this review. Cutting-edge device performance like error-free operation at 25 Gb s−1 data rate, large VCSEL arrays with high output powers, widely tunable devices, or novel nano-photonic device concepts could be realized.

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