Abstract
A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2 μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF3/ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10 °C at a wavelength of 2.49 μm and a peak output power of 400 μW at −18 °C has been achieved. Single-mode emission with a side-mode suppression ratio of 30 dB for mesa diameters up to 14 μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5 nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
