Abstract
Indium antimonide crystals were synthesized from the respective component elements using the vertical Bridgman technique. The grown crystals were characterized by using X-ray analysis, EDX, electrical conductivity and thermoelectric power measurements. The calculated structural parameters for the prepared crystal have a good agreement with the standard values. Crystallite size (D) of the obtained InSb crystals was calculated to be 62.4 nm. The measurements reveal higher values for Seebeck coefficient, electrical conductivity and power factor than the published results for the same compound.
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