Abstract
Gallium nitride (GaN) nanoflowers were synthesized on a silicon (Si) substrate at growth temperatures of 650 and 600 °C and under HCl:NH 3 flow ratios of 1:20, 1:30, and 1:40 by hydride vapor phase epitaxy. Numerous nanorod and nanoneedle burs were formed within each nanoflower. The nanoflower size increased with increasing NH 3 gas flow rate. The nanoflower formation mechanism is proposed based on cross-sectional scanning electron microscopy images and bright field image of scanning transmission electron microscopy. Nanoflowers were evolved from irregular regions with AlN–SiO 2 grains on a Si substrate, i.e., the roughness of substrate affects nanoflower formation by causing nanoburs to protrude, exposing them to higher gas concentrations.
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