Abstract

A molecular dynamics study has been performed to investigate the generation and evolution of damage states in irradiated β-SiC at high temperature. It is found that most of the C antisites (SiC) are created during the early collisional phase, while the Si antisites (CSi) are significantly produced during the thermal spike phase. A modified near-neighbor point defect density (NPDD) is introduced to study the spatial aggregation of different defects during the displacement cascades, and feature of defect clusters evolution is analyzed in details. The dominated types of vacancy clusters after the displacement cascades are two- and three-size chainlike ones. And the vacancy NPDD (V-NPDD) decreases as the recoil energy increases. Furthermore, after the thermal spike phase, there is an additional annealing process during which the interstitials and antisites turn into defect clusters, respectively.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.