Abstract
A set of four lightly p-type 6H SiC boule samples was implanted with H or He and annealed in isochronal stages from 950°C to 1500°C. Differences in the hydrogen, DI and DII low temperature photoluminescence spectra are observed and compared. Surprisingly, the hydrogen spectrum appears after a 1300°C anneal in the He implanted samples. A number of unidentified damage lines are also reported.
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