Abstract

The growth of CdZnTe crystal suffers from poor yield due to the low thermal conductivity, and a convex growth interface is usually essential to grow large-volume CdZnTe single crystal because it can lessen the adverse interactions between the growing crystal and crucible wall. The growth of 90 mm diameter CdZnTe crystal by VGF technique has been investigated using experimental and simulation methods. The influences of the growth parameters (such as temperature gradient and growth rate) and the heat transfer configurations on the growth interface shape have been inspected respectively by the unsteady simulation. The simulation results confirm that the interface shape exhibits the tendency to be “convex → flat → concave” due to the gradually deteriorated heat transfer environment with time during growth. In addition, a modified configuration has been designed and used in experiments based on the simulation results, with the aim of strengthening the conduction heat transfer of the center region of the configuration geometry. The modified configuration consists of the splicing tapered-contact quartz&graphite support with a shorter conical region and seed region, as well as the SiC holder. Experimental results demonstrate that the modified configuration would make the growth interface maintain a convex shape for a longer duration. The CdZnTe crystal grown by using the modified configuration possesses fewer grains compared with that using the initial configuration.

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