Abstract
The study of a silica nanolayer implanted by semiconductor (germanium or silicon) species offers unique insights regarding the structural evolution and, ultimately, the controlled fabrication of nanoelectronics multiphase materials through one or more phase transformation steps. A description integrating important restructuring phenomena identified so far is provided and special emphasis is placed upon the interpretation and consequences of new transmission electron microscopy observations of in situ phase separation of Ge-implanted nanolayers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
