Abstract
The effects of heavy Si doping in GaAs layers grown by molecular beam epitaxy as a function of varying arsenic to gallium (group V/III) flux ratio have been studied. By using a slow growth rate of 1500 Å/h, a high electron concentration of ≊5.5×1018 cm−3 was achieved, which decreases sharply following a decrease in the group V/III flux ratio. The low-temperature photoluminescence spectra also show a broad low-energy peak (≊1.284 eV) as the flux ratio decreases. Secondary ion mass spectroscopy measurements show that the effect of Si accumulation near the GaAs surface is increased at lower flux ratios.
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