Abstract
Current-voltage and capacitance characteristics in the low-frequency range (down to 10−3 s−1) as well as photo-e.m.f. are investigated in sandwich struetures Au(Al)CGSAI, where CGS is a chalcogenide glassy semiconductor film of As2S3 or Sb2S3 of 0.3 to 3.0 μm in thickness. It is found, that with rising temperature or lowering applied voltage frequency the capacitance of the structures rapidly increases, when the period of voltage variation reaches the dielectric relaxation time of CGS. Then the capacitance of the contact M–CGS tarriers dominates in the structure and is found to be strongly voltage dependent, decreasing as the bias at the reverse-biased barrier is increased. At the contact M–CGS the conductance is polarity dependent, photo-e.m.f. is observed as well as internal photoemission, as shown earlier, and estirrations of the barrier heights from these effects are in accordance. The barrier heights depend on the M–CGS pair and correlate with the metal work functions. The above properties lead to the conclusion that a Schottky barrier is formed at the M–CGS contact. [Russian Text Ignored].
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