Abstract
ZnSnAs2 epitaxial films of various thicknesses have been grown on InP(001) substrates by molecular beam epitaxy using different growth times. No manifestations of epitaxial layer lattice relaxation such as broadening of the full width at half maximum of high-resolution x-ray diffraction rocking curves, reduction of the ratio of the diffraction peak intensities of the epitaxial layer and the substrate, and extinction of the Pendellosüng fringes were observed with increasing sample thickness. This implies that the epitaxial films remain pseudomorphic with the InP substrate to a thickness of at least 285 nm. Micro-Raman spectroscopy measurements revealed that all the samples exhibited A1 vibrational modes that were similar to those observed in chalcopyrite semiconductors
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