Abstract
The defect properties in as-grown and deformedp-type GaAs with different concentration of dopants and different growth method have investigated by positron lifetime measurement. The result indicates that no positron trapping was observed in LEC-grown Zn-dopedp-type GaAs. However, in HB- and FZ-grown Zn-doped GaAs, positron trapping into vacancy type defects was observed. In deformed samples, clusters were formed during deformation. Positron detected shallow positron traps and the dominant shallow positron traps were attributed to Zn acceptors in Zn-doped GaAs.
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