Abstract
Positron lifetime spectra have been measured on plastically deformed Zn-doped p-type GaAs with strain ranging from 0 to 15% at room temperature. The lifetime spectra were analyzed using PATFIT and MELT programs. Two lifetime components were observed in deformed samples. The second lifetime τ2 ∼ 400 to 450 ps indicated that vacancy clusters were formed during deformation. From the temperature behavior of positron lifetime in 15% deformed samples, the positron detected negative ions as shallow positron traps, and the dominant shallow traps were attributed to acceptor impurity Zn ions with negative charge. The positron trapping rate of vacancy clusters was also estimated.
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