Abstract
Generation lifetimes and interface state densities of n-type 4H-SiC metal oxide semiconductor (MOS) capacitors are characterized by using the pulsed MOS capacitor technique. A decrease in lifetime and increase in interface state density occurs when the devices are negatively biased at 400°C. This behavior is consistent with an effect seen in Si∕SiO2 devices known as negative bias temperature instability. A portion of the lifetime degradation caused by this effect can be recovered by removing the negative bias as well as by positively biasing the device.
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