Evidence of formation of diluted magnetic semiconductor Sn1-xMnxTe quantum dots in glass matrix

Abstract

In the current study, we work to acquire quantum dots from manganese-doped tin telluride (SnTe). Diluted Magnetic Semiconductor Sn1-xMnxTe QDs were successfully synthesized embedded in a glass matrix. Fusion and heat treatment time methods were used to form and grow the QDs. Transmission electron microscopy images showed that quantum dots with an average diameter of 5 nm formed in the glass matrix. The interplanar distances dhkl measured in TEM and the pattern observed in electron diffraction from the selected area confirms the SnTe semiconductor crystalline nature. Electron paramagnetic resonance spectra reveal six hyperfine lines for electronic transition +½ ↔ -½ resulting from Mn2+ ions in the crystal field. EPR spectra indicated Mn2+ ion incorporation in the core and surface of Sn1-xMnxTe QDs. The observed A1 and ETO phonon modes and the blueshift/cm−1 in the Raman spectrum provide strong evidence for symmetry breaking and net polarizability established with xMn2+ ion doping in Sn1-xMnxTe QDs.