Evidence of field induced nucleation in phase change memory

Abstract

Experimental data on switching in phase change memory testify in favor of its underlying nucleation mechanism with field dependent nucleation barrier. Similar to the standard nucleation, switching occurs after exponentially long delay time when the conditions are not favorable enough, e.g., the nucleation barrier not low or the temperature not high enough. The switching statistics is found to be consistent with the nucleation mechanism as well. A theoretical model of nucleation switching is outlined.