Abstract
We report low temperature photoluminescence measurements on nominally undoped and chlorine-doped bulk CdTe and undoped as well as indium-doped MBE CdTe layers. From the magnetic field dependence of the free-to-bound transitions, we obtained the effective mass of the conduction band electron and the binding energies of acceptors in CdTe. From the analysis of the energetic shifts and splittings of the 1.4 eV luminescence band, we distinguish two recombinations of completely different nature. The 1.452 eV line is a (D 0, A 0) and (e, A 0) transition, where the acceptor is propable Cu and has a binding energy of 147.2±0.3 meV. The luminescence near 1.475 eV is assigned with a (D 0, h) transition. The donor is deep ( E D = 131 meV) and most likely a Cl I-Cl Te complex.
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