Abstract
We have investigated the electrical and optical properties of the deep levels responsible for the 1.4–1.5 eV luminescence band usually observed in II–VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating (CdTe:Cl and Cd0.8Zn0.2Te) and semiconducting samples (undoped CdTe). The techniques utilized were deep level transient spectroscopy (DLTS) on semiconducting samples and photoinduced current transient spectroscopy and photo-DLTS on high resistivity materials. These last two techniques are complementary and allow the determination of the trap character (donor/acceptor). Three acceptor levels are seen in the electrical transient data at Ev+0.12, 0.14, and 0.16 eV with hole capture cross sections of 2×10−16, 1×10−16, and 4×10−17 cm2, respectively. The lowest level is seen only in Cl doped material corroborating the literature optical and electron spin resonance identification of a level at Ev+0.12 eV as being a VCd+ClTe donor–acceptor pair center. All three levels may be present in the 1.4 eV luminescence band.
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