Abstract
Interfacial chemistry and Fermi-level movement for interfaces of noble metals on InP(110) prepared at room temperature (RT) and 80 K low temperature (LT) have been examined using photoelectron spectroscopy. An interfacial reaction is detected for all the RT interfaces as well as the LT Cu/InP interface, and the Fermi levels are pinned at 0.95 eV above the valence-band maximum (VBM). However, for LT Au/InP and Ag/InP, no reaction is seen, and the Fermi level is pinned around 0.7 eV above the VBM. The 0.7-eV pinning position at the near ideal LT Au/InP and Ag/InP interface is associated with metal induced gap states (MIGS), whereas, that at 0.95 eV is associated with defects formed during the interfacial reaction. These results indicate that both MIGS and defects can be important in the Fermi-level pinning and that the former is dominant only when the defect density is sufficiently low.
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