Abstract
We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0001) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi2Se3 || (0001) Al2O3 and [21¯1¯0] Bi2Se3 || [21¯1¯0] Al2O3 (or) [21¯1¯0] Bi2Se3 || [112¯0] Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9T. These results suggest topological surface states in PLD-grown Bi2Se3 films.
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