Evidence for the formation of GaAs homojunction far-infrared detection by magnetic fielddependent Hall analysis

Abstract

Experimental magnetic field dependent Hall and resistivity data are presented for n-GaAshomojunction far-infrared (FIR) detector structures in the temperature rangefrom 1.8 to 200.0 K and with a magnetic field up to 15 T. The carrier transportproperties of the multilayer/multicarrier structure have been separated and quantifiedindividually by a hybrid approach consisting of mobility spectrum analysis followed by amulticarrier fitting procedure. The observed temperature dependence of mobility andconcentration is explained using classical band theory, which unambiguously revealshighly doped degenerate contact layers and semiconductor–metal transition inemitter layers. The detailed analysis of the concentration and the Fermi level in theemitter layers gives clear evidence for the formation of GaAs homojunction FIRdetection occurring at the interfaces between the emitter and intrinsic layers.