Abstract
The electronic structure near the Fermi level in the Cu 50 Zr 50-x Al x metallic glass changes gradually from the d -dominant to sp -dominant states, as Zr is replaced by Al. A change in the electronic structure was studied by both electronic specific heat and magnetic susceptibility measurements. We found that the functional form of the temperature variation of electrical resistivity changes significantly over the temperature range 2–300 K in accordance with a change in the electronic structure. In addition, the Hall coefficient was found to retain a positive sign over a wide Al concentration range and to change its sign only when Zr content is reduced below a few %.
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