Abstract
The hot carrier degradation behavior of lateral integrated DMOS transistors is studied in detail with a state-of-the-art, high-resolution measurement equipment It has been demonstrated that two degradation mechanisms are present: electron mobility reduction due to interface trap formation and injection and trapping of hot electrons at the source side of the channel. It will be shown that the Source Side Injection mechanism gives rise to rather moderate changes ofthe linear drain current (I d,lin ) but significant changes of the saturation drain current (I d,sat ) and the threshold voltage (V t ).
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