Abstract
We have investigated the origin of the photoluminescence (PL) W band in ion-implanted Si by studying the temperature evolution and depth profile of the related defects. Evolution of the PL spectra induced by postimplant annealing is correlated to a transition of small interstitial clusters to extended {311} defects in self-ion-implanted Si. Growth of W band intensity after step-by-step removal of the damaged layer rules out the involvement of vacancy-related defects in the formation of the W center and establishes that migrated and clustered interstitials give rise to an intense W band. The annealing behavior and the thermally activated growth of the W center suggest the involvement of small interstitial clusters, larger than di-interstitial. In accordance with recent results based on simulational studies, we argue that the W center consists of tri-interstitial clusters of silicon.
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