Abstract
The authors present direct evidence for Te segregation to the grain boundaries in chalcogenide Ge2Sb2Te5 films by using transmission electron microscopy scans with a 0.5nm diameter focused probe. This finding is consistent with the observed impeded grain growth and with the post-transition relief of a “spikelike” stress, fully to the pretransition level. Te motion shows up in void formation below 200°C, a pileup of Te at the surface and its loss at higher (above 400°C) temperatures. Tuning the driving force for this segregation may be key for the optimal phase-change material design.
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