Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium.

Abstract

We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga,As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of $^{70}\mathrm{Ge}$ and $^{74}\mathrm{Ge}$, viz. $^{70}\mathrm{Ge}_{\mathit{x}}$ $^{74}\mathrm{Ge}_{1\mathrm{\ensuremath{-}}\mathit{x}}$. With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5\ifmmode\times\else\texttimes\fi{}${10}^{14}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$. The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers. \textcopyright{} 1996 The American Physical Society.