Abstract
A new form of bottom antireflection coating for hyper-NA photolithography is introduced. The system uses evanescent coupling of energy into a resonant underlayer to provide the out-of-phase backward going wave to destructively interfere. Two example film stacks operating at 405 nm for immersion interference lithography are shown: photoresist/MgF2/Ru/Si and photoresist/CaF2/HfO2/CaF2/SiO2. The first example uses an excitonic resonator and operates with TM polarization. The second example uses a dielectric resonator and operates with TE polarization. The technique is scalable to any wavelength, including 193 nm for immersion photolithography, provided suitable combinations of dielectric and/or excitonic/plasmonic materials are available.
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