Abstract
In order to measure silicide-to-silicon specific contact resistance rhoc, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
