Abstract
We develop a technique for accurately measuring thickness of planar InAs films grown on (001) GaAs by spectroscopic ellipsometry, using bulk optical constants. We observe that the critical point structure for the E1 and E1 + Δ1 transitions extracted from the measured dielectric properties varies with strain in the layer. Transmission electron microscopy confirms the extracted thickness and measures the residual strain based on the dislocation spacing in the film. At small thickness, the E1 critical point is seen to markedly deviate from the dependence predicted by deformation potential theory and appears to be consistent with additional quantum confinement effects.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
