Abstract
Photocapacitance measurements have been performed to evaluate the electrical effectiveness of gettering by back-side damage, introduced by a cavitating jet into silicon wafers. The silicon wafers, which had their back sides damaged previously in localized areas, were intentionally contaminated and subsequently thermally treated to diffuse the contamination through the wafer. The density of deep levels varied between the areas with back-side damage and those without. The results obtained on back-side damaged areas were closer to those on the original starting material. These results confirm that the back-side damage introduced by a cavitating jet can function as gettering sites.
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