Abstract
Using the temperature programmed desorption (TPD) method and a scanning tunneling microscope (STM), the correspondence between carbon incorporation into a Si(001) substrate and the development of a c(4×4) area on a surface has been investigated. In TPD spectra, γ peaks have been observed for substrates exposed to various amounts of monomethylsilane (MMS) at 660°C, which indicates the occurrence of carbon incorporation into the subsurface layer. From estimations, it has been found that the area of a γ peak is increased with exposure time. On the other hand, STM images have revealed that a c(4×4) surface consists of both (2×1) domains and c(4×4) domains. As the amount of MMS exposure increases, the c(4×4) domain expands and the entire surface is covered with a c(4×4) structure at 280 L. By comparing the area of a γ peak with the c(4×4) coverage at each exposure condition, it has been found that the relationship between them is approximately linear.
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