Abstract
An analysis method obtaining kinetic parameters of H2 desorption from Si–H terminated Si(100) surfaces by using thermal desorption spectroscopy (TDS) is presented. So far, the H2 partial pressure in the chamber has been assumed to be proportional to the desorption rate in the thermal desorption experiments. However, this assumption may possibly lead to errors in determining the hydrogen desorption reaction order. To eliminate the error, we show a calculation method where the desorption rate is directly derived from the H2-partial pressure in consideration with the residence time of H2. The H2 desorption rate–substrate temperature spectrum obtained in this method allows a precise determination of the reaction order, the activation energy and the frequency factor for hydrogen desorption.
Published Version
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