Abstract
Abstract A set of criteria were set and used to select high temperature resistance strain gauge candidate materials. Transition metal compounds, including carbides, nitrides, a boride and a silicide, were chosen for the experimental phases. The electrical resistance of these compound thin films was studied in the temperature range 20–1000°C with the intention of identifying materials with a low temperature coefficient of resistance and a low resistance drift rate at 1000°C. These are the two controlling factors in the selection of materials which are potentially useful as resistance strain gauges at 1000°C. A correlation between the resistivity of these compound thin films, their temperature coefficients of resistance, their drift rates and the position of the transition metal in the periodic table has been established.
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