Abstract
Abstract A non-destructive microwave technique has been developed and implemented for measuring the most important parameters in solar cell materials: resistivity, mobility and minority carrier lifetime. The technique consists in observing the change in microwave reflection when the sample is placed in front of a specially built and well-calibrated antenna. Use of a d.c. magnetic field and of a pulse of light allows measurement of the majority carrier mobility and minority carrier lifetime. Application of these techniques to simple structures makes possible the measurement of interface recombination velocity and diffusion constant. Magnetoresistance measurements have been made to determine electron mobility in semi-insulating GaAs at room temperature.
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