Abstract
To meet the growing need of e-beam lithography resists with high resolution as well as high etch durability in plasma, a new resist, RE-650 had been developed in our earlier work. This paper reports our comprehensive tests of RE-650, regarding its e-beam lithogrpahy performance, dry-etch property and nanofabrication capability. Evaluations of minimum widths of lines and/or trenches, dense gatings, dry etch speed in fluorine based plasma and lift off performance in nanofabrications of T shape gates were carried out. In all these tests, RE-650 has demonstrated impressive performance, especially its high resistivity to the plasma etching, meeting the needs in nanoprocess for nanostrctures and nanodevices. Because of this, RE-650 should find broad applications for nanofabrications after being scaled up.
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