Abstract
Subsurface damage of (100)-oriented InAs wafers generated in chemical-mechanical polishing processes has been investigated by wet chemical etching and optical microscopy. The trend of corrosion rate as a function of removal thickness in the process of chemical etching is a powerful statement that subsurface damage exists in the polished InAs substrate. Besides, a new method based on the changes in the morphology of the shallow pits caused by preferential corrosion has been established for InAs (100) surface to reveal the subsurface damage induced during the polishing process. The nature and formation mechanism of shallow pits are discussed in detail.
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