Evaluation of plasma damage using fully processed metal–oxide–semiconductor transistors

Abstract

The device damage during plasma etching is studied in this work using fully processed metal–oxide–semiconductor (MOS) transistors with antennas to accentuate oxide charging effect. The investigation of both charging damage and another damage that occurs during poly gate etching are reported in this article. The susceptibility of plasma damaged n-MOS and p-MOS devices to hot carrier stress is shown to be a function of the etch chemistry and etching tool.