Abstract
The electrical characterization of p-n diodes fabricated using a newly developed high temperature (⩾ 1100 °C) boron diffusion source consisting of a homogenous distribution of 9Al 2O 3·2B 2O 3 in a SiC foam substrate was carried out and results were compared with those obtained using commercial sources. Specifically, current-voltage and open circuit voltage decay measurements were performed. The results obtained indicate that devices fabricated from the new high temperature source perform satisfactorily, exhibiting characteristics that are comparable to the characteristics of devices fabricated from the established commercial high temperature boron diffusion sources.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
