Abstract
In this work, we investigated the effect of deposition conditions such as sputtering power, oxygen ratio and sputtering pressure on the properties of Nd–Al doped indium-zinc oxide (NA-IZO) thin-film transistors based on copper (Cu) electrodes. The quality of deposited films was evaluated by introducing a microwave photoconductivity decay (μ-PCD) measurement. The results showed strong connection between sputtering conditions and μ-PCD results, which reveal that sputtering process was vital for film quality control. In addition, the tendency of obtained Peak value and D value from μ-PCD was in highly consistent with the final devices performance especially the saturation mobility. As a result, the optimized devices showed a saturation mobility of 21.4 cm2 V−1 s−1, threshold voltage about 1.0 V, subthreshold swing about 0.18 V/decade and Ion/Ioff ratio about 9.9 × 107. The non-destructive and efficient μ-PCD method offers a convenient way to optimize the deposition procedure for metal oxide semiconductors.
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