Abstract
We have investigated the effect of using different arsenic species on the degree of vertical self-alignment of InAs/GaNAs strain-compensated QDs in molecular beam epitaxy (MBE). We used the pairing ratio as a measure to evaluate the degree of vertical self-alignment. For the spacer layer thickness of >20nm, the QD pairing ratio for As2 sample of 53% was smaller than that for As4 of 62%. For As2 sample, we think that the QD formation is more strongly affected by surface structure with a high step density than pairing effect resulting from strain field propagation.
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