Abstract
Hot carrier degradation in n-channel MOSFET transistors has been evaluated using the charge pumping technique in addition to the conventional I_{ds}-V_{gs} measurements. It is shown that the generation of large amounts of interface states is the primary result of moderate hot carrier stress. The simultaneous injection and recombination of injected electrons and holes is suggested to be responsible for this formation of interface states. The net charge in the oxide and interface states after any hot carrier stress is shown to be positive.
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