Evaluation of fixed abrasive diamond wire sawing induced subsurface damage of solar silicon wafers

Abstract

Considering the random distribution characteristics of diamond abrasive, a new evaluation model of subsurface damage (SSD) depth is proposed for the solar silicon wafer processed by diamond wire sawing (DWS). With the model, SSD depths are calculated under different slicing parameters. A series of silicon wafers are processed by DWS under different slicing parameters, and their SSD depths are measured. Using the response surface model and Pareto charts, the effects of slicing parameters on cutting behaviors of abrasive and SSD depth of silicon wafers are analyzed experimentally and theoretically. The results show that the average penetration depth or active abrasive ratio or SSD depth increase with increased feed speed and decreased wire speed. For SSD depth, the main effect of feed speed is slightly stronger than that of wire speed. Furthermore, the evaluation model is discussed under different brittle material removal ways and then is modified. The modified model could be used to predict the SSD depth of silicon wafer by slicing parameters to a certain extent. The research is useful to optimize the DWS to reduce the SSD of silicon wafer.