Abstract
We have examined the parameters in the fabrication process of interface-modified ramp-edge junctions which influence their I c spread. The distribution of ion-beam energy and the uniformity of ion beam for making an amorphous layer and the base-electrode film quality such as the density of outgrowth or particles and the roughness of the ramp surfaces are important factors determining the I c spread. We have found another important factor, that is, the recrystallization energy from a laser plume. By adding proper adjustment of the relative location between substrate and the laser plume, I c spread values of 5.7% and 7.3% have been obtained for arrays of 100 JJ and 1000 JJ, respectively.
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