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Abstract
This work reports about influence of step bunching of SiC epitaxial-wafer surface on Fowler-Nordheim (F-N) tunneling emission current of SiC-MOS capacitor. We have measured the effective barrier height (ΦB) of SiO2/SiC interface, and estimated the deterioration factor of the effective ΦB on step bunching surface by calculating the local tunneling emission currents. Step bunching fluctuates the gate oxide thickness. The effective ΦB value can be successively derived using our proposed partitioned model in which constant ΦB value of flat surface is used. The fluctuation of the oxide film thickness results in the convergence of F-N tunneling emission currents at the thinner oxide in the MOS capacitor.
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