Critical field behavior and antiband instability under controlled surface electromigration on Si(111)

Abstract

In this study we investigate step bunching and antiband surface instabilities on Si(111). We experimentally study the effects of a controlled electromigration field on the onset of antibands. We analyze the initial stage of antiband formation on step bunched surfaces under conditions of constant temperature of 1270 \ifmmode^\circ\else\textdegree\fi{}C, while systematically varying the applied electromigration field. The relationship between the electromigration field and minimum terrace width required to initiate the antiband formation has been established. Also, we systematically measured values of the critical electromigration field, which is required to initiate the step-bunching process on Si(111) at 1130 \ifmmode^\circ\else\textdegree\fi{}C (regime II) and 1270 \ifmmode^\circ\else\textdegree\fi{}C (regime III). The dependence of the critical field on the mean atomic terrace width has been investigated and discussed.