Abstract
Semiconductor nanowires (NWs) are very promising building blocks for future electronic and optoelectronic devices. Realizing this, nevertheless, requires overcoming several important challenges, such as control and evaluation of doping levels in NWs. Due to the nanoscale nature of NWs, characterization techniques, such as Hall effect measurements and four-point probes, used conventionally for the evaluation of doping in bulk materials cannot be easily applied. A quantitative technique with high spatial resolution is required for mapping the dopant levels in NWs. Here, in order to evaluate the incorporation of Sn as an n-type dopant in GaP core-shell nanowire pn junctions, we use off-axis electron holography in the transmission electron microscope (TEM).
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