Abstract
The influence of gamma radiation on the current-voltage characteristics of silicon PIN photodiodes S1223 from Hammamatsu was investigated for their use as gamma radiation dose rate sensitive elements. The transfer characteristic and the dependence of the current sensitivity on the absorbed dose rate in the range from 6.7 Gy(Si)/h to 124 Gy(Si)/h were studied. The range of reverse voltages corresponding to the highest current sensitivity of PIN diodes is determined. An analytical expression of the transfer characteristic for the operating mode with maximum sensitivity to gamma radiation is obtained.
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Schedule a callMore From: IOP Conf. Series: Materials Science and Engineering
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